SIP30N60G21B IGBT. Datasheet pdf. Equivalent
Type Designator: SIP30N60G21B
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 170
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 41
Collector Capacity (Cc), typ, pF: 82
Total Gate Charge (Qg), typ, nC: 60
Package: TO220
SIP30N60G21B Transistor Equivalent Substitute - IGBT Cross-Reference Search
SIP30N60G21B Datasheet (PDF)
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th
Datasheet: SL20T65FZ , SL20T65FL , SL20T65FL1 , SL20T65K1 , SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , GT50JR22 , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 .
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IGBT: KDG20N120H2 | GT40T321 | SIB30N65G21F | SIW30N65G21F | SIP30N65G21F | SIF30N65G21F | SIB30N60G21B | SIW30N60G21B | SIP30N60G21B | SIF30N60G21B | SL40T65FL1