SIP30N60G21B Specs and Replacement
Type Designator: SIP30N60G21B
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 82 pF
Package: TO220
SIP30N60G21B Substitution
SIP30N60G21B specs
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf
SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SI*30N60G21B Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N60G21B/SIP30N60G21B/SIW30N60G21B/ SIB30N60G21B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf
SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*30N65G21F Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N65G21F/SIP30N65G21F/SIW30N65G21F/ SIB30N65G21F 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒
Specs: SL20T65FZ , SL20T65FL , SL20T65FL1 , SL20T65K1 , SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , MBQ60T65PES , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 .
Keywords - SIP30N60G21B transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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