SIF30N65G21F Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SIF30N65G21F Specs and Replacement

Type Designator: SIF30N65G21F

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 31 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 41 nS

Coesⓘ - Output Capacitance, typ: 82 pF

Package: TO220F

SIF30N65G21F Substitution

- IGBT ⓘ Cross-Reference Search

SIF30N65G21F datasheet

..1. Size:1094K cn super semi
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf pdf_icon

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*30N65G21F Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N65G21F/SIP30N65G21F/SIW30N65G21F/ SIB30N65G21F 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒

7.1. Size:1095K cn super semi
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf pdf_icon

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SI*30N60G21B Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N60G21B/SIP30N60G21B/SIW30N60G21B/ SIB30N60G21B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒

Specs: SL20T65K1 , SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , FGH60N60SMD , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ .