SIF30N65G21F PDF and Equivalents Search

 

SIF30N65G21F PDF Specs and Replacement


   Type Designator: SIF30N65G21F
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 31 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 82 pF
   Package: TO220F
 

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SIF30N65G21F PDF specs

 ..1. Size:1094K  cn super semi
 sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf pdf_icon

SIF30N65G21F

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*30N65G21F Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N65G21F/SIP30N65G21F/SIW30N65G21F/ SIB30N65G21F 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒

 7.1. Size:1095K  cn super semi
 sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf pdf_icon

SIF30N65G21F

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SI*30N60G21B Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N60G21B/SIP30N60G21B/SIW30N60G21B/ SIB30N60G21B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒

Specs: SL20T65K1 , SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , FGH60N60SMD , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ .

Keywords - SIF30N65G21F transistor spec

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