All IGBT. ATT060U060EQ Datasheet

 

ATT060U060EQ Datasheet and Replacement


   Type Designator: ATT060U060EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 454 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 96 nS
   Coesⓘ - Output Capacitance, typ: 244 pF
   Qgⓘ - Total Gate Charge, typ: 132 nC
   Package: TO-247
      - IGBT Cross-Reference

 

ATT060U060EQ Datasheet (PDF)

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ATT060U060EQ

N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APT100GF60LR | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | IGB30N60T

Keywords - ATT060U060EQ transistor datasheet

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