ATT060U060EQ Specs and Replacement
Type Designator: ATT060U060EQ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 454 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 96 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Package: TO-247
ATT060U060EQ Substitution - IGBT ⓘ Cross-Reference Search
ATT060U060EQ datasheet
att060u060eq.pdf
N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech... See More ⇒
Specs: SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , RJP30E2DPP-M0 , ATT075N065EQ , JT010N065SED , JT010N065CED , JT010N065FED , JT010N065WED , JT015N065SED , JT015N065CED , JT015N120F7PD1E .
Keywords - ATT060U060EQ transistor spec
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