JT030N065F6MD1E Specs and Replacement
Type Designator: JT030N065F6MD1E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: MODULE JT030N065F6MD1E Substitution - IGBTⓘ Cross-Reference Search
JT030N065F6MD1E datasheet
jt030n065f6md1e.pdf
IGBT IGBT Modules R IGBT JT030N065F6MD1E MAIN CHARACTERISTICS Package IC 30A 650V V CES Vcesat_typ 1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology ... See More ⇒
jt030n065f7pd1e.pdf
IGBT IGBT Modules R IGBT JT030N065F7PD1E MAIN CHARACTERISTICS Package IC 30A 650V V CES Vcesat_typ 1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology ... See More ⇒
jt030n065wed jt030n065fed jt030n065sed.pdf
N N-CHANNEL IGBT R JT030N065WED/FED/SED MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.75V VCE SAT-TYP APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench F... See More ⇒
Specs: JT015N065CED, JT015N120F7PD1E, JT020N065SED, JT020N065CED, JT020N065WED, JT020N065FED, JT020N135WED, JT030N065AED, MBQ50T65FDSC, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED, JT040K065AED, JT050K120F2MA1E, JT050N065WED
Keywords - JT030N065F6MD1E transistor spec
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History: FGY75T95LQDT | JT030N065AED | IXXX100N60C3H1
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