JT050K120F2MA1E PDF and Equivalents Search

 

JT050K120F2MA1E Specs and Replacement

Type Designator: JT050K120F2MA1E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 285 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: MODULE

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JT050K120F2MA1E datasheet

 0.1. Size:990K  jilin sino
jt050k120f2ma1e.pdf pdf_icon

JT050K120F2MA1E

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 9.1. Size:1652K  jilin sino
jt050n120gped.pdf pdf_icon

JT050K120F2MA1E

N N-CHANNEL IGBT R JT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS ... See More ⇒

 9.2. Size:723K  jilin sino
jt050n065wed.pdf pdf_icon

JT050K120F2MA1E

N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15V APPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS... See More ⇒

 9.3. Size:1007K  jilin sino
jt050n120f2ma1e.pdf pdf_icon

JT050K120F2MA1E

N N-CHANNEL IGBT R IGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CES Vcesat_typ 1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS ... See More ⇒

Specs: JT030N065AED, JT030N065F6MD1E, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED, JT040K065AED, IKW50N60T, JT050N065WED, JT050N120F2MA1E, JT050N120GPED, JT05N065RAD, JT05N065VAD, JT05N065SAD, JT05N065RED, JT05N065SED

Keywords - JT050K120F2MA1E transistor spec

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