JT050K120F2MA1E Datasheet and Replacement
Type Designator: JT050K120F2MA1E
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 285 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 260 pF
Qg ⓘ - Total Gate Charge, typ: 200 nC
Package: MODULE
JT050K120F2MA1E substitution
JT050K120F2MA1E Datasheet (PDF)
jt050k120f2ma1e.pdf

N N-CHANNEL IGBT RIGBT JT050K120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ2.0V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES
jt050n120gped.pdf

N N-CHANNEL IGBT RJT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS
jt050n065wed.pdf

N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS
jt050n120f2ma1e.pdf

N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS
Datasheet: JT030N065AED , JT030N065F6MD1E , JT030N065F7PD1E , JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED , MBQ50T65FDSC , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD , JT05N065RED , JT05N065SED .
History: JT05N065RAD
Keywords - JT050K120F2MA1E transistor datasheet
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JT050K120F2MA1E replacement
History: JT05N065RAD



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