JT050N120GPED IGBT. Datasheet pdf. Equivalent
Type Designator: JT050N120GPED
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 114 nS
Coesⓘ - Output Capacitance, typ: 290 pF
Qgⓘ - Total Gate Charge, typ: 168 nC
Package: TO-247PLUS
JT050N120GPED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT050N120GPED Datasheet (PDF)
jt050n120gped.pdf
N N-CHANNEL IGBT RJT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS
jt050n120f2ma1e.pdf
N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS
jt050n065wed.pdf
N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS
jt050k120f2ma1e.pdf
N N-CHANNEL IGBT RIGBT JT050K120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ2.0V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES
Datasheet: JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , SGT50T65FD1PN , JT05N065RAD , JT05N065VAD , JT05N065SAD , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E .
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