JT050N120GPED IGBT. Datasheet pdf. Equivalent
Type Designator: JT050N120GPED
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 600
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 114
Collector Capacity (Cc), typ, pF: 290
Total Gate Charge (Qg), typ, nC: 168
Package: TO-247PLUS
JT050N120GPED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT050N120GPED Datasheet (PDF)
jt050n120gped.pdf
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N N-CHANNEL IGBT RJT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS
jt050n120f2ma1e.pdf
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N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS
jt050n065wed.pdf
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N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS
jt050k120f2ma1e.pdf
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N N-CHANNEL IGBT RIGBT JT050K120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ2.0V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES
Datasheet: JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , FGPF4633 , JT05N065RAD , JT05N065VAD , JT05N065SAD , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E .
![JT050N120GPED](https://alltransistors.com/images/us.png)
![JT050N120GPED](https://alltransistors.com/images/es.png)
![JT050N120GPED](https://alltransistors.com/images/ru.png)
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