All IGBT. JT05N065SED Datasheet

 

JT05N065SED Datasheet and Replacement


   Type Designator: JT05N065SED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 96.2 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 31.3 pF
   Qgⓘ - Total Gate Charge, typ: 13.7 nC
   Package: TO-263
      - IGBT Cross-Reference

 

JT05N065SED Datasheet (PDF)

 ..1. Size:2071K  jilin sino
 jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf pdf_icon

JT05N065SED

N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology

 5.1. Size:1562K  jilin sino
 jt05n065rad jt05n065vad jt05n065sad.pdf pdf_icon

JT05N065SED

N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - JT05N065SED transistor datasheet

 JT05N065SED cross reference
 JT05N065SED equivalent finder
 JT05N065SED lookup
 JT05N065SED substitution
 JT05N065SED replacement

 

 
Back to Top

 


 
.