All IGBT. JT05N065SED Datasheet

 

JT05N065SED Datasheet and Replacement


   Type Designator: JT05N065SED
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 96.2 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 31.3 pF
   Package: TO-263
 

 JT05N065SED substitution

   - IGBT ⓘ Cross-Reference Search

 

JT05N065SED Datasheet (PDF)

 ..1. Size:2071K  jilin sino
 jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf pdf_icon

JT05N065SED

N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology

 5.1. Size:1562K  jilin sino
 jt05n065rad jt05n065vad jt05n065sad.pdf pdf_icon

JT05N065SED

N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech

Datasheet: JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD , JT05N065RED , IKW30N60H3 , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E .

History: FF1200R17KE3_B2

Keywords - JT05N065SED transistor datasheet

 JT05N065SED cross reference
 JT05N065SED equivalent finder
 JT05N065SED lookup
 JT05N065SED substitution
 JT05N065SED replacement

 

 
Back to Top

 


 
.