All IGBT. JT05N065FED Datasheet

 

JT05N065FED Datasheet and Replacement


   Type Designator: JT05N065FED
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 31.3 pF
   Package: TO-220MF
      - IGBT Cross-Reference

 

JT05N065FED Datasheet (PDF)

 ..1. Size:2071K  jilin sino
 jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf pdf_icon

JT05N065FED

N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology

 6.1. Size:1562K  jilin sino
 jt05n065rad jt05n065vad jt05n065sad.pdf pdf_icon

JT05N065FED

N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech

Datasheet: JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD , JT05N065RED , JT05N065SED , SGH80N60UFD , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E .

History: IXGH16N60B2D1 | IXGR50N60C2D1 | RJP60V0DPM | MG300N1US1 | GT10G101 | VS-GT140DA60U | IXGH35N120B

Keywords - JT05N065FED transistor datasheet

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