JT450N120F2MHTE Datasheet and Replacement
Type Designator: JT450N120F2MHTE
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 450 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 2100 pF
Package: MODULE
- IGBT Cross-Reference
JT450N120F2MHTE Datasheet (PDF)
jt450n120f2mhte.pdf

N N-CHANNEL IGBT RIGBT JT450N120F2MHTE MAIN CHARACTERISTICS Package IC 450 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt450n120f2mh1e.pdf

N N-CHANNEL IGBT RIGBT JT450N120F2MH1E MAIN CHARACTERISTICS Package IC 450 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG600WB065B6EN | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | MMG75SR120UZA
Keywords - JT450N120F2MHTE transistor datasheet
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JT450N120F2MHTE replacement
History: MMG600WB065B6EN | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | MMG75SR120UZA



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