All IGBT. JT450N120F2MHTE Datasheet

 

JT450N120F2MHTE Datasheet and Replacement


   Type Designator: JT450N120F2MHTE
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 450 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 66 nS
   Coesⓘ - Output Capacitance, typ: 2100 pF
   Qg ⓘ - Total Gate Charge, typ: 3100 nC
   Package: MODULE
 

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JT450N120F2MHTE Datasheet (PDF)

 0.1. Size:1152K  jilin sino
 jt450n120f2mhte.pdf pdf_icon

JT450N120F2MHTE

N N-CHANNEL IGBT RIGBT JT450N120F2MHTE MAIN CHARACTERISTICS Package IC 450 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

 1.1. Size:1210K  jilin sino
 jt450n120f2mh1e.pdf pdf_icon

JT450N120F2MHTE

N N-CHANNEL IGBT RIGBT JT450N120F2MH1E MAIN CHARACTERISTICS Package IC 450 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

Datasheet: JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , GT30F125 , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ .

History: RGTH60TS65DGC13 | IXYH40N120B3D1

Keywords - JT450N120F2MHTE transistor datasheet

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