TT050U065FBC IGBT. Datasheet pdf. Equivalent
Type Designator: TT050U065FBC
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 394 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 325 pF
Package: TO-247
TT050U065FBC Transistor Equivalent Substitute - IGBT Cross-Reference Search
TT050U065FBC Datasheet (PDF)
tt050u065fbc.pdf
N N-CHANNEL IGBT RTT050U065FBC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.4V APPLICATIONS Charging pile Built in SiC SBD UPS UPS Solar converters Energy Storage FEATURES Low gate c
tt050u065fb.pdf
N N-CHANNEL IGBT RTT050U065FB MAIN CHARACTERISTICS Package IC 50A VCE 650V VCEsat-TYP 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
att050k065fqc.pdf
N N-CHANNEL IGBT RATT050K065FQC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.35V APPLICATIONS Charging pile UPS UPS Solar converters Energy Storage Built in SiC SBD FEATURES Low gate
tt050k065fq.pdf
N N-CHANNEL IGBT RTT050K065FQ MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.55V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
Datasheet: TT030U065FBA , TT030U065FQ , TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ , TT050K065FQ , TT050U065FB , RJP6065DPM , TT060U060EQ , TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E .
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