NCE100ED65BT PDF and Equivalents Search

 

NCE100ED65BT Specs and Replacement

Type Designator: NCE100ED65BT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 606 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO247

 NCE100ED65BT Substitution

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NCE100ED65BT datasheet

 ..1. Size:780K  ncepower
 nce100ed65bt.pdf pdf_icon

NCE100ED65BT

NCE100ED65BT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = ... See More ⇒

 0.1. Size:738K  ncepower
 nce100ed65bt4.pdf pdf_icon

NCE100ED65BT

NCE100ED65BT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC =... See More ⇒

 4.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED65BT

NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒

 4.2. Size:1092K  ncepower
 nce100ed65vtp4.pdf pdf_icon

NCE100ED65BT

NCE100ED65VTP4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC ... See More ⇒

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Specs: TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , IRGP4062D , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , NCE100ED75VTP4 .

Keywords - NCE100ED65BT transistor spec

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