All IGBT. NCE100ED65BT Datasheet

 

NCE100ED65BT IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE100ED65BT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 606 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 201 nC
   Package: TO247

 NCE100ED65BT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE100ED65BT Datasheet (PDF)

 ..1. Size:780K  ncepower
 nce100ed65bt.pdf

NCE100ED65BT NCE100ED65BT

NCE100ED65BT650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC =

 0.1. Size:738K  ncepower
 nce100ed65bt4.pdf

NCE100ED65BT NCE100ED65BT

NCE100ED65BT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC =

 4.1. Size:1119K  ncepower
 nce100ed65vt4.pdf

NCE100ED65BT NCE100ED65BT

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

 4.2. Size:1092K  ncepower
 nce100ed65vtp4.pdf

NCE100ED65BT NCE100ED65BT

NCE100ED65VTP4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

 4.3. Size:1166K  ncepower
 nce100ed65vt.pdf

NCE100ED65BT NCE100ED65BT

NCE100ED65VT650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

 4.4. Size:1179K  ncepower
 nce100ed65vtp.pdf

NCE100ED65BT NCE100ED65BT

NCE100ED65VTP650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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