NCE100TD120VTP4 Datasheet and Replacement
Type Designator: NCE100TD120VTP4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 937
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic|ⓘ - Maximum Collector Current: 200
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7
V @25℃
Tjⓘ -
Maximum Junction Temperature: 175
℃
trⓘ - Rise Time, typ: 17
nS
Coesⓘ - Output Capacitance, typ: 425
pF
Package: TO-247P-4L
- IGBT Cross-Reference
NCE100TD120VTP4 Datasheet (PDF)
..1. Size:1617K ncepower
nce100td120vtp.pdf 
Pb Free ProductNCE100TD120VTP1200V, 100A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switchin
0.1. Size:1856K ncepower
nce100td120vtp4.pdf
Pb Free ProductNCE100TD120VTP41200V, 100A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switchi
3.1. Size:1550K ncepower
nce100td120btp.pdf
Pb Free ProductNCE100TD120BTP1200V, 100A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switchin
8.1. Size:1119K ncepower
nce100ed65vt4.pdf
NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =
8.2. Size:780K ncepower
nce100ed65bt.pdf
NCE100ED65BT650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC =
8.3. Size:1092K ncepower
nce100ed65vtp4.pdf
NCE100ED65VTP4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC
8.4. Size:1166K ncepower
nce100ed65vt.pdf
NCE100ED65VT650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =
8.5. Size:738K ncepower
nce100ed65bt4.pdf
NCE100ED65BT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC =
8.6. Size:742K ncepower
nce100ed75vtp4.pdf
NCE100ED75VTP4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC
8.7. Size:764K ncepower
nce100ed75vt4.pdf
NCE100ED75VT4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =
8.8. Size:811K ncepower
nce100ed75vt.pdf
NCE100ED75VT750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =
8.9. Size:1179K ncepower
nce100ed65vtp.pdf
NCE100ED65VTP650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =
Datasheet: APT20GN60BG
, APT20GN60KG
, APT20GN60SG
, AOK20B60D1
, F3L30R06W1E3_B11
, WGW15G120N
, WGW15G120W
, IRG4MC50U
, GT30F131
, AOB10B60D
, AOK10B60D
, AOT10B60D
, NGB8207AB
, NGB8207B
, AOB15B60D
, IRGSL8B60K
, AOK15B60D
.
History: 2MBI100UA-120
| SKM150GB12T4
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