NCE160ED120VTP4 Specs and Replacement
Type Designator: NCE160ED120VTP4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1010 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 320 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 395 pF
Package: TO-247P-4L NCE160ED120VTP4 Substitution - IGBTⓘ Cross-Reference Search
NCE160ED120VTP4 datasheet
nce160ed120vtp.pdf
NCE160ED120VTP 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 160... See More ⇒
nce160ed120vtp4.pdf
NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16... See More ⇒
nce160ed65vtp.pdf
NCE160ED65VTP 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC... See More ⇒
nce160ed65vtp4.pdf
NCE160ED65VTP4 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ I... See More ⇒
Specs: NCE15TD135LP, NCE15TD135LT, NCE15TD60BP, NCE15TD60BT, NCE15TD65BF, NCE15TD65BP, NCE15TD65BT, NCE160ED120VTP, FGA60N65SMD, NCE160ED65VTP, NCE160ED65VTP4, NCE20TD60BP, NCE20TD60BT, NCE20TD65BD, NCE20TH60BF, NCE25TC120HD, NCE25TD120BD
Keywords - NCE160ED120VTP4 transistor spec
NCE160ED120VTP4 cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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