All IGBT. NCE25TD120W Datasheet

 

NCE25TD120W Datasheet and Replacement


   Type Designator: NCE25TD120W
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 365 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 86 pF
   Package: TO-220
      - IGBT Cross-Reference

 

NCE25TD120W Datasheet (PDF)

 ..1. Size:1488K  ncepower
nce25td120w.pdf pdf_icon

NCE25TD120W

Pb Free ProductNCE25TD120W1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 0.1. Size:1474K  ncepower
nce25td120wt.pdf pdf_icon

NCE25TD120W

Pb Free ProductNCE25TD120WT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.1. Size:382K  ncepower
nce25td120lp.pdf pdf_icon

NCE25TD120W

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 4.2. Size:1324K  ncepower
nce25td120bd.pdf pdf_icon

NCE25TD120W

Pb Free ProductNCE25TD120BD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

Datasheet: NCE20TD65BD , NCE20TH60BF , NCE25TC120HD , NCE25TD120BD , NCE25TD120LP , NCE25TD120VD , NCE25TD120VT , NCE25TD120VTP , YGW60N65F1A1 , NCE25TD120WT , NCE25TD135LP , NCE30TD65BD , NCE30TD65BP , NCE30TD65BT , NCE40ED120VT , NCE40ED120VTP , NCE40ED65BF .

History: MG300Q2YS40 | MITA10WB1200TMH | RJP60V0DPM | MG300N1US1 | GT10G101 | NGTB40N120SWG | JNG30T60FS

Keywords - NCE25TD120W transistor datasheet

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