NCE40ED120VTP Specs and Replacement
Type Designator: NCE40ED120VTP
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 364 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 104 pF
Package: TO247
NCE40ED120VTP Substitution - IGBT ⓘ Cross-Reference Search
NCE40ED120VTP datasheet
nce40ed120vtp.pdf
NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒
nce40ed120vt.pdf
NCE40ED120VT 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒
nce40ed65bt.pdf
NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40... See More ⇒
nce40ed65vt.pdf
NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40... See More ⇒
Specs: NCE25TD120VTP, NCE25TD120W, NCE25TD120WT, NCE25TD135LP, NCE30TD65BD, NCE30TD65BP, NCE30TD65BT, NCE40ED120VT, CRG60T60AK3HD, NCE40ED65BF, NCE40ED65BT, NCE40ED65VT, NCE40ED75VT, NCE40ER65BP, NCE40ER65BPF, NCE40ER65BT, NCE40EU65UT
Keywords - NCE40ED120VTP transistor spec
NCE40ED120VTP cross reference
NCE40ED120VTP equivalent finder
NCE40ED120VTP lookup
NCE40ED120VTP substitution
NCE40ED120VTP replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775 | 2n1305 | 2sc5242