NCE40ED65BF PDF and Equivalents Search

 

NCE40ED65BF Specs and Replacement

Type Designator: NCE40ED65BF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 245 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 71 pF

Package: TO-220F

 NCE40ED65BF Substitution

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NCE40ED65BF datasheet

 ..1. Size:704K  ncepower
 nce40ed65bf.pdf pdf_icon

NCE40ED65BF

NCE40ED65BF 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40... See More ⇒

 4.1. Size:783K  ncepower
 nce40ed65bt.pdf pdf_icon

NCE40ED65BF

NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40... See More ⇒

 5.1. Size:1119K  ncepower
 nce40ed65vt.pdf pdf_icon

NCE40ED65BF

NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40... See More ⇒

 7.1. Size:1203K  ncepower
 nce40ed120vtp.pdf pdf_icon

NCE40ED65BF

NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

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Specs: NCE25TD120W, NCE25TD120WT, NCE25TD135LP, NCE30TD65BD, NCE30TD65BP, NCE30TD65BT, NCE40ED120VT, NCE40ED120VTP, IRGP4086, NCE40ED65BT, NCE40ED65VT, NCE40ED75VT, NCE40ER65BP, NCE40ER65BPF, NCE40ER65BT, NCE40EU65UT, NCE40T120VT

Keywords - NCE40ED65BF transistor spec

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