NCE40ER65BT IGBT. Datasheet pdf. Equivalent
Type Designator: NCE40ER65BT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 245 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 54 pF
Qgⓘ - Total Gate Charge, typ: 57 nC
Package: TO-247
NCE40ER65BT Transistor Equivalent Substitute - IGBT Cross-Reference Search
NCE40ER65BT Datasheet (PDF)
nce40er65bt.pdf
Pb Free ProductNCE40ER65BT650V, 40A, Trench FS III Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS III IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSIII Technology offering Very low VCE(sat) High speed switching
nce40er65bpf.pdf
Pb Free ProductNCE40ER65BPF650V, 40A, Trench FS III Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS III IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSIII Technology offering Very low VCE(sat) High speed switching
nce40er65bp.pdf
Pb Free ProductNCE40ER65BP650V, 40A, Trench FS III Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS III IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSIII Technology offering Very low VCE(sat) High speed switching
nce40ed65bt.pdf
NCE40ED65BT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40
nce40ed65vt.pdf
NCE40ED65VT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 40
nce40ed120vtp.pdf
NCE40ED120VTP1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC
nce40eu65ut.pdf
NCE40EU65UT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.80V(Typ.) @ IC = 40
nce40ed120vt.pdf
NCE40ED120VT1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =
nce40ed65bf.pdf
NCE40ED65BF650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40
nce40ed75vt.pdf
NCE40ED75VT750V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC = 40
Datasheet: NCE40ED120VT , NCE40ED120VTP , NCE40ED65BF , NCE40ED65BT , NCE40ED65VT , NCE40ED75VT , NCE40ER65BP , NCE40ER65BPF , TGPF30N40P , NCE40EU65UT , NCE40T120VT , NCE40T120WD , NCE40T60BP , NCE40TD120LP , NCE40TD120LT , NCE40TD120UT , NCE40TD120WW .
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