NCE40TD65BP Specs and Replacement
Type Designator: NCE40TD65BP
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 288 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 136 pF
Package: TO-3P
NCE40TD65BP Substitution - IGBT ⓘ Cross-Reference Search
NCE40TD65BP datasheet
nce40td65b.pdf
Pb Free Product NCE40TD65B 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce40td65bt.pdf
PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp... See More ⇒
Specs: NCE40TD120LP, NCE40TD120LT, NCE40TD120UT, NCE40TD120WW, NCE40TD135LP, NCE40TD135LT, NCE40TD60BPF, NCE40TD65B, GT30F133, NCE40TH60BPF, NCE40TH60BT, NCE50ED120VT, NCE50ED120VTP, NCE50ED65VT, NCE50EU65UT, NCE50TD120BP, NCE50TD120BT
Keywords - NCE40TD65BP transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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