NCE50ED120VT Specs and Replacement
Type Designator: NCE50ED120VT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 437 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 46 nS
Coesⓘ - Output Capacitance, typ: 137 pF
Package: TO247
NCE50ED120VT Substitution - IGBTⓘ Cross-Reference Search
NCE50ED120VT datasheet
nce50ed120vt.pdf
NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒
nce50ed120vtp.pdf
NCE50ED120VTP 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒
nce50ed65vt.pdf
NCE50ED65VT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 50... See More ⇒
nce50eu65ut.pdf
NCE50EU65UT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 50... See More ⇒
Specs: NCE40TD120WW, NCE40TD135LP, NCE40TD135LT, NCE40TD60BPF, NCE40TD65B, NCE40TD65BP, NCE40TH60BPF, NCE40TH60BT, IKW40T120, NCE50ED120VTP, NCE50ED65VT, NCE50EU65UT, NCE50TD120BP, NCE50TD120BT, NCE50TD120VT, NCE50TD120VTP, NCE50TD120WT
Keywords - NCE50ED120VT transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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