NCE50ED120VTP PDF and Equivalents Search

 

NCE50ED120VTP Specs and Replacement

Type Designator: NCE50ED120VTP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 437 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 46 nS

Coesⓘ - Output Capacitance, typ: 137 pF

Package: TO247

 NCE50ED120VTP Substitution

- IGBTⓘ Cross-Reference Search

 

NCE50ED120VTP datasheet

 ..1. Size:1175K  ncepower
 nce50ed120vtp.pdf pdf_icon

NCE50ED120VTP

NCE50ED120VTP 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 2.1. Size:1161K  ncepower
 nce50ed120vt.pdf pdf_icon

NCE50ED120VTP

NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

 7.1. Size:1194K  ncepower
 nce50ed65vt.pdf pdf_icon

NCE50ED120VTP

NCE50ED65VT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 50... See More ⇒

 8.1. Size:1222K  ncepower
 nce50eu65ut.pdf pdf_icon

NCE50ED120VTP

NCE50EU65UT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 50... See More ⇒

SHOW MORE

Specs: NCE40TD135LP, NCE40TD135LT, NCE40TD60BPF, NCE40TD65B, NCE40TD65BP, NCE40TH60BPF, NCE40TH60BT, NCE50ED120VT, IRG4PC50W, NCE50ED65VT, NCE50EU65UT, NCE50TD120BP, NCE50TD120BT, NCE50TD120VT, NCE50TD120VTP, NCE50TD120WT, NCE50TD120WW

Keywords - NCE50ED120VTP transistor spec

 NCE50ED120VTP cross reference
 NCE50ED120VTP equivalent finder
 NCE50ED120VTP lookup
 NCE50ED120VTP substitution
 NCE50ED120VTP replacement

 

 

 

 

↑ Back to Top
.