All IGBT. NCE50ED65VT Datasheet

 

NCE50ED65VT Datasheet and Replacement


   Type Designator: NCE50ED65VT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 294 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO247
      - IGBT Cross-Reference

 

NCE50ED65VT Datasheet (PDF)

 ..1. Size:1194K  ncepower
 nce50ed65vt.pdf pdf_icon

NCE50ED65VT

NCE50ED65VT650V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 50

 7.1. Size:1161K  ncepower
 nce50ed120vt.pdf pdf_icon

NCE50ED65VT

NCE50ED120VT1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 7.2. Size:1175K  ncepower
 nce50ed120vtp.pdf pdf_icon

NCE50ED65VT

NCE50ED120VTP1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 8.1. Size:1222K  ncepower
 nce50eu65ut.pdf pdf_icon

NCE50ED65VT

NCE50EU65UT650V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.80V(Typ.) @ IC = 50

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Datasheet: NCE40TD135LT , NCE40TD60BPF , NCE40TD65B , NCE40TD65BP , NCE40TH60BPF , NCE40TH60BT , NCE50ED120VT , NCE50ED120VTP , GT30G122 , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT .

History: VS-GA100TS60SFPBF | IXST35N120B | AUIRGR4045D | MSG100D350FHS | MPBW50N65E | MSG20T65HPT1 | MSG40T120FQC

Keywords - NCE50ED65VT transistor datasheet

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