All IGBT. NCE50ED65VT Datasheet

 

NCE50ED65VT IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE50ED65VT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 294 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Qgⓘ - Total Gate Charge, typ: 104 nC
   Package: TO247

 NCE50ED65VT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE50ED65VT Datasheet (PDF)

 ..1. Size:1194K  ncepower
 nce50ed65vt.pdf

NCE50ED65VT NCE50ED65VT

NCE50ED65VT650V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 50

 7.1. Size:1161K  ncepower
 nce50ed120vt.pdf

NCE50ED65VT NCE50ED65VT

NCE50ED120VT1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 7.2. Size:1175K  ncepower
 nce50ed120vtp.pdf

NCE50ED65VT NCE50ED65VT

NCE50ED120VTP1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 8.1. Size:1222K  ncepower
 nce50eu65ut.pdf

NCE50ED65VT NCE50ED65VT

NCE50EU65UT650V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.80V(Typ.) @ IC = 50

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
Back to Top