All IGBT. NCE60TD65BP Datasheet

 

NCE60TD65BP Datasheet and Replacement


   Type Designator: NCE60TD65BP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 319 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 199 pF
   Qg ⓘ - Total Gate Charge, typ: 262 nC
   Package: TO-3P
 

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NCE60TD65BP Datasheet (PDF)

 ..1. Size:1526K  ncepower
 nce60td65bp.pdf pdf_icon

NCE60TD65BP

Pb Free ProductNCE60TD65BP650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.1. Size:1652K  1
 nce60td65bt.pdf pdf_icon

NCE60TD65BP

PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.2. Size:1696K  ncepower
 nce60td65bt.pdf pdf_icon

NCE60TD65BP

Pb Free ProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 4.3. Size:1576K  ncepower
 nce60td65bt4.pdf pdf_icon

NCE60TD65BP

Pb Free ProductNCE60TD65BT4650V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

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Datasheet: NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT , SGT60U65FD1PT , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT , NCE75ED65VT4 .

Keywords - NCE60TD65BP transistor datasheet

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