All IGBT. NCE75ED120VT4 Datasheet

 

NCE75ED120VT4 Datasheet and Replacement


   Type Designator: NCE75ED120VT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 650 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 169 pF
   Qg ⓘ - Total Gate Charge, typ: 261 nC
   Package: TO-247-4L
 

 NCE75ED120VT4 substitution

   - IGBT ⓘ Cross-Reference Search

 

NCE75ED120VT4 Datasheet (PDF)

 ..1. Size:1131K  ncepower
 nce75ed120vt4.pdf pdf_icon

NCE75ED120VT4

NCE75ED120VT41200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 2.1. Size:1233K  ncepower
 nce75ed120vtp.pdf pdf_icon

NCE75ED120VT4

NCE75ED120VTP1200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 2.2. Size:1219K  ncepower
 nce75ed120vt.pdf pdf_icon

NCE75ED120VT4

NCE75ED120VT1200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 2.3. Size:1144K  ncepower
 nce75ed120vtp4.pdf pdf_icon

NCE75ED120VT4

NCE75ED120VTP41200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

SHOW MORE

Datasheet: NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , NCE60TD120UT , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , IXRH40N120 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT , NCE75ED65VT4 , NCE75ED65VTP , NCE75ED75VT , NCE75ED75VT4 .

History: NCE75ED120VTP

Keywords - NCE75ED120VT4 transistor datasheet

 NCE75ED120VT4 cross reference
 NCE75ED120VT4 equivalent finder
 NCE75ED120VT4 lookup
 NCE75ED120VT4 substitution
 NCE75ED120VT4 replacement

 

 
Back to Top

 


 
.