NCE75ED120VTP4 Datasheet. Specs and Replacement

Type Designator: NCE75ED120VTP4  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 650 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 169 pF

Package: TO-247P-4L

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NCE75ED120VTP4 datasheet

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NCE75ED120VTP4

NCE75ED120VTP4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC... See More ⇒

 1.1. Size:1233K  ncepower
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NCE75ED120VTP4

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 2.1. Size:1131K  ncepower
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NCE75ED120VTP4

NCE75ED120VT4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 2.2. Size:1219K  ncepower
 nce75ed120vt.pdf pdf_icon

NCE75ED120VTP4

NCE75ED120VT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

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Specs: NCE50TD120WT, NCE50TD120WW, NCE60TD120UT, NCE60TD65BP, NCE60TD65BT4, NCE75ED120VT, NCE75ED120VT4, NCE75ED120VTP, CRG75T65AK5HD, NCE75ED65BT, NCE75ED65VT, NCE75ED65VT4, NCE75ED65VTP, NCE75ED75VT, NCE75ED75VT4, NCE75EU65UT, NCE75T120VT

Keywords - NCE75ED120VTP4 transistor spec

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