NCE75ED65VT Datasheet. Specs and Replacement

Type Designator: NCE75ED65VT  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 402 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 157 pF

Package: TO247

 NCE75ED65VT Substitution

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NCE75ED65VT datasheet

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NCE75ED65VT

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75... See More ⇒

 0.1. Size:1082K  ncepower
 nce75ed65vt4.pdf pdf_icon

NCE75ED65VT

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

 0.2. Size:1142K  ncepower
 nce75ed65vtp.pdf pdf_icon

NCE75ED65VT

NCE75ED65VTP 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

 5.1. Size:800K  ncepower
 nce75ed65bt.pdf pdf_icon

NCE75ED65VT

NCE75ED65BT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 75... See More ⇒

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Specs: NCE60TD120UT, NCE60TD65BP, NCE60TD65BT4, NCE75ED120VT, NCE75ED120VT4, NCE75ED120VTP, NCE75ED120VTP4, NCE75ED65BT, IKW40N65WR5, NCE75ED65VT4, NCE75ED65VTP, NCE75ED75VT, NCE75ED75VT4, NCE75EU65UT, NCE75T120VT, NCE75TD120BT, NCE75TD120BT4

Keywords - NCE75ED65VT transistor spec

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