All IGBT. NCE75ED65VT4 Datasheet

 

NCE75ED65VT4 IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE75ED65VT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 402 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 157 pF
   Qgⓘ - Total Gate Charge, typ: 155 nC
   Package: TO-247-4L

 NCE75ED65VT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE75ED65VT4 Datasheet (PDF)

 ..1. Size:1082K  ncepower
 nce75ed65vt4.pdf

NCE75ED65VT4 NCE75ED65VT4

NCE75ED65VT4650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 7

 3.1. Size:1129K  ncepower
 nce75ed65vt.pdf

NCE75ED65VT4 NCE75ED65VT4

NCE75ED65VT650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 75

 3.2. Size:1142K  ncepower
 nce75ed65vtp.pdf

NCE75ED65VT4 NCE75ED65VT4

NCE75ED65VTP650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 7

 5.1. Size:800K  ncepower
 nce75ed65bt.pdf

NCE75ED65VT4 NCE75ED65VT4

NCE75ED65BT650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 75

Datasheet: NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT , IRG4PH50UD , NCE75ED65VTP , NCE75ED75VT , NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP .

 

 
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