NCE75EU65UT PDF and Equivalents Search

 

NCE75EU65UT Specs and Replacement


   Type Designator: NCE75EU65UT
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 402 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   tr ⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 162 pF
   Package: TO247
 

 NCE75EU65UT Substitution

   - IGBT ⓘ Cross-Reference Search

 

NCE75EU65UT datasheet

 ..1. Size:796K  ncepower
nce75eu65ut.pdf pdf_icon

NCE75EU65UT

NCE75EU65UT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 75... See More ⇒

 8.1. Size:1082K  ncepower
nce75ed65vt4.pdf pdf_icon

NCE75EU65UT

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

 8.2. Size:799K  ncepower
nce75ed75vt.pdf pdf_icon

NCE75EU65UT

NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75... See More ⇒

 8.3. Size:1129K  ncepower
nce75ed65vt.pdf pdf_icon

NCE75EU65UT

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75... See More ⇒

Specs: NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT , NCE75ED65VT4 , NCE75ED65VTP , NCE75ED75VT , NCE75ED75VT4 , IRG4PF50W , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 .

Keywords - NCE75EU65UT transistor spec

 NCE75EU65UT cross reference
 NCE75EU65UT equivalent finder
 NCE75EU65UT lookup
 NCE75EU65UT substitution
 NCE75EU65UT replacement

 

 
Back to Top

 


 
.