NCE75EU65UT Specs and Replacement
Type Designator: NCE75EU65UT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 402
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30
V
|Ic| ⓘ - Maximum Collector Current: 150
A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175
℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.8
V @25℃
tr ⓘ - Rise Time, typ: 18
nS
Coesⓘ - Output Capacitance, typ: 162
pF
Package:
TO247
-
IGBT ⓘ Cross-Reference Search
NCE75EU65UT datasheet
..1. Size:796K ncepower
nce75eu65ut.pdf 

NCE75EU65UT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 75... See More ⇒
8.1. Size:1082K ncepower
nce75ed65vt4.pdf 

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒
8.2. Size:799K ncepower
nce75ed75vt.pdf 

NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75... See More ⇒
8.3. Size:1129K ncepower
nce75ed65vt.pdf 

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75... See More ⇒
8.4. Size:1233K ncepower
nce75ed120vtp.pdf 

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒
8.5. Size:1131K ncepower
nce75ed120vt4.pdf 

NCE75ED120VT4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒
8.6. Size:752K ncepower
nce75ed75vt4.pdf 

NCE75ED75VT4 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 7... See More ⇒
8.7. Size:1219K ncepower
nce75ed120vt.pdf 

NCE75ED120VT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒
8.8. Size:800K ncepower
nce75ed65bt.pdf 

NCE75ED65BT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 75... See More ⇒
8.9. Size:1144K ncepower
nce75ed120vtp4.pdf 

NCE75ED120VTP4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC... See More ⇒
8.10. Size:1142K ncepower
nce75ed65vtp.pdf 

NCE75ED65VTP 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒
Specs: NCE75ED120VTP
, NCE75ED120VTP4
, NCE75ED65BT
, NCE75ED65VT
, NCE75ED65VT4
, NCE75ED65VTP
, NCE75ED75VT
, NCE75ED75VT4
, IRG4PF50W
, NCE75T120VT
, NCE75TD120BT
, NCE75TD120BT4
, NCE75TD120BTP
, NCE75TD120BTP4
, NCE75TD120VT
, NCE75TD120WT
, NCE75TD120WT4
.
Keywords - NCE75EU65UT transistor spec
NCE75EU65UT cross reference
NCE75EU65UT equivalent finder
NCE75EU65UT lookup
NCE75EU65UT substitution
NCE75EU65UT replacement