All IGBT. NCE75TD120WT Datasheet

 

NCE75TD120WT Datasheet and Replacement


   Type Designator: NCE75TD120WT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 833 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 320 pF
   Package: TO-247
      - IGBT Cross-Reference

 

NCE75TD120WT Datasheet (PDF)

 ..1. Size:1533K  ncepower
nce75td120wt.pdf pdf_icon

NCE75TD120WT

Pb Free ProductNCE75TD120WT1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 0.1. Size:1512K  ncepower
nce75td120wt4.pdf pdf_icon

NCE75TD120WT

Pb Free ProductNCE75TD120WT41200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 3.1. Size:1549K  ncepower
nce75td120ww.pdf pdf_icon

NCE75TD120WT

Pb Free ProductNCE75TD120WW1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 4.1. Size:1502K  ncepower
nce75td120btp4.pdf pdf_icon

NCE75TD120WT

Pb Free ProductNCE75TD120BTP41200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

Datasheet: NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , FGPF4533 , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P .

History: BSM50GD120DN2E3226 | AUIRGP35B60PD-E | RJP60V0DPM | GT10G101 | MG300N1US1 | JT05N065FED | IXGH16N60B2D1

Keywords - NCE75TD120WT transistor datasheet

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