BLG40T120FDH-F Datasheet. Specs and Replacement
Type Designator: BLG40T120FDH-F 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 367 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 81 nS
Coesⓘ - Output Capacitance, typ: 168 pF
Package: TO-247
BLG40T120FDH-F Substitution - IGBTⓘ Cross-Reference Search
BLG40T120FDH-F datasheet
blg40t120fdh-f.pdf
BLG40T120FDH IGBT 1 Description Step-Down Converter BLG40T120FDH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A ... See More ⇒
blg40t120fuk-f.pdf
BLG40T120FUK IGBT 1 Description Step-Down Converter BLG40T120FUK is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A C... See More ⇒
blg40t120fuh-f.pdf
BLG40T120FUH IGBT 1 Description Step-Down Converter BLG40T120FUH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A ... See More ⇒
blg40t65fdk-w blg40t65fdk-f.pdf
BLG40T65FDK IGBT 1 Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 ... See More ⇒
Specs: BLG20T65FDLA-F, BLG20T65FDLA-B, BLG20T65FULA-P, BLG20T65FULA-A, BLG3040-D, BLG3040-B, BLG3040-P, BLG3040-I, SGT40N60NPFDPN, BLG40T120FUH-F, BLG40T120FUK-F, BLG40T65FDK-W, BLG40T65FDK-F, BLG40T65FDL-F, BLG40T65FDL-K, BLG40T65FDL-W, BLG40T65FUK-W
Keywords - BLG40T120FDH-F transistor spec
BLG40T120FDH-F cross reference
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History: APTGT50X120BTP3
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