BLG40T65FDL-W Datasheet and Replacement
Type Designator: BLG40T65FDL-W
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 157 pF
Qg ⓘ - Total Gate Charge, typ: 110 nC
Package: TO-3PN
BLG40T65FDL-W substitution
BLG40T65FDL-W Datasheet (PDF)
blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fdk-w blg40t65fdk-f.pdf

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
blg40t65fuk-w blg40t65fuk-f.pdf

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IXGN60N60C2 | IXXH50N60B3 | AP30G120ASW | IXGP24N60C4D1 | MMG450WB120B6E4N | IRG4PC50UPBF
Keywords - BLG40T65FDL-W transistor datasheet
BLG40T65FDL-W cross reference
BLG40T65FDL-W equivalent finder
BLG40T65FDL-W lookup
BLG40T65FDL-W substitution
BLG40T65FDL-W replacement
History: IXGN60N60C2 | IXXH50N60B3 | AP30G120ASW | IXGP24N60C4D1 | MMG450WB120B6E4N | IRG4PC50UPBF



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