All IGBT. BLG50T65FDLA-F Datasheet

 

BLG50T65FDLA-F Datasheet and Replacement


   Type Designator: BLG50T65FDLA-F
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 158 pF
   Package: TO-247
 

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BLG50T65FDLA-F Datasheet (PDF)

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BLG50T65FDLA-F

BLG50T65FDLA IGBT 1Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

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 blg50t65fdka-f.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FDKA IGBT 1Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

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 blg50t65fla-f.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.2. Size:833K  belling
 blg50t65fka-f.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FKA IGBT 1Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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Datasheet: BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , GT30J127 , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F .

History: VS-GT400TH120U | NGTB30N120LWG

Keywords - BLG50T65FDLA-F transistor datasheet

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 BLG50T65FDLA-F replacement

 

 
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