All IGBT. BLG50T65FDLA-F Datasheet

 

BLG50T65FDLA-F Datasheet and Replacement


   Type Designator: BLG50T65FDLA-F
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G50T65FDLA
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 158 pF
   Qgⓘ - Total Gate Charge, typ: 106 nC
   Package: TO-247
      - IGBT Cross-Reference

 

BLG50T65FDLA-F Datasheet (PDF)

 ..1. Size:1095K  belling
 blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FDLA IGBT 1Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 4.1. Size:889K  belling
 blg50t65fdka-f.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FDKA IGBT 1Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.1. Size:786K  belling
 blg50t65fla-f.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.2. Size:833K  belling
 blg50t65fka-f.pdf pdf_icon

BLG50T65FDLA-F

BLG50T65FKA IGBT 1Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

SHOW MORE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IXGT72N60A3 | 1MBG10D-060

Keywords - BLG50T65FDLA-F transistor datasheet

 BLG50T65FDLA-F cross reference
 BLG50T65FDLA-F equivalent finder
 BLG50T65FDLA-F lookup
 BLG50T65FDLA-F substitution
 BLG50T65FDLA-F replacement

 

 
Back to Top

 


 
.