All IGBT. BLG50T65FKA-F Datasheet

 

BLG50T65FKA-F Datasheet and Replacement


   Type Designator: BLG50T65FKA-F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO-247
      - IGBT Cross-Reference

 

BLG50T65FKA-F Datasheet (PDF)

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BLG50T65FKA-F

BLG50T65FKA IGBT 1Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 5.1. Size:1095K  belling
blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf pdf_icon

BLG50T65FKA-F

BLG50T65FDLA IGBT 1Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.2. Size:889K  belling
blg50t65fdka-f.pdf pdf_icon

BLG50T65FKA-F

BLG50T65FDKA IGBT 1Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.3. Size:786K  belling
blg50t65fla-f.pdf pdf_icon

BLG50T65FKA-F

BLG50T65FLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

Datasheet: BLG40T65FUK-F , BLG40T65FUL-F , BLG40T65FUL-K , BLG40T65FUL-W , BLG50T65FDKA-F , BLG50T65FDLA-F , BLG50T65FDLA-K , BLG50T65FDLA-W , IRG7R313U , BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K , BLG60T65FDK-W , BLG60T65FDL-F , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - BLG50T65FKA-F transistor datasheet

 BLG50T65FKA-F cross reference
 BLG50T65FKA-F equivalent finder
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 BLG50T65FKA-F substitution
 BLG50T65FKA-F replacement

 

 
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