BLG50T65FKA-F Datasheet. Specs and Replacement
Type Designator: BLG50T65FKA-F 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO-247
BLG50T65FKA-F Substitution - IGBTⓘ Cross-Reference Search
BLG50T65FKA-F datasheet
blg50t65fka-f.pdf
BLG50T65FKA IGBT 1 Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650... See More ⇒
blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf
BLG50T65FDLA IGBT 1 Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒
blg50t65fdka-f.pdf
BLG50T65FDKA IGBT 1 Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒
blg50t65fla-f.pdf
BLG50T65FLA IGBT 1 Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒
Specs: BLG40T65FUK-F, BLG40T65FUL-F, BLG40T65FUL-K, BLG40T65FUL-W, BLG50T65FDKA-F, BLG50T65FDLA-F, BLG50T65FDLA-K, BLG50T65FDLA-W, IRG7R313U, BLG50T65FLA-F, BLG60T65FDK-F, BLG60T65FDK-K, BLG60T65FDK-W, BLG60T65FDL-F, BLG60T65FDL-K, BLG60T65FDL-W, BLG60T65FUL-F
Keywords - BLG50T65FKA-F transistor spec
BLG50T65FKA-F cross reference
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