BLQG3040A-D Spec and Replacement
Type Designator: BLQG3040A-D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 370 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.12 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 3000 nS
Coesⓘ - Output Capacitance, typ: 62 pF
Package: TO-252
BLQG3040A-D Transistor Equivalent Substitute - IGBT Cross-Reference Search
BLQG3040A-D specs
blqg3040a-d blqg3040a-b.pdf
BLQG3040A IGBT 1 Description BLQG3040A is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. ... See More ⇒
blqg3040-d blqg3040-b.pdf
BLQG3040 IGBT 1 Description BLQG3040 is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. K... See More ⇒
Specs: BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , BLG60T65FUL-W , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F , GT45F122 , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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