All IGBT. IXGR40N60BD1 Datasheet

 

IXGR40N60BD1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGR40N60BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 370 pF
   Qgⓘ - Total Gate Charge, typ: 116 nC
   Package: PLUS247

 IXGR40N60BD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGR40N60BD1 Datasheet (PDF)

 ..1. Size:53K  ixys
 ixgr40n60bd1.pdf

IXGR40N60BD1 IXGR40N60BD1

VCES = 600 VIXGR 40N60BHiPerFASTTM IGBTIC25 = 70 AIXGR 40N60BD1ISOPLUS247TMVCE(sat) = 2.1 V(Electrically Isolated Backside)tfi(typ) = 180 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 70 A CE Isolated Backsi

 4.1. Size:53K  ixys
 ixgr40n60b.pdf

IXGR40N60BD1 IXGR40N60BD1

VCES = 600 VIXGR 40N60BHiPerFASTTM IGBTIC25 = 70 AIXGR 40N60BD1ISOPLUS247TMVCE(sat) = 2.1 V(Electrically Isolated Backside)tfi(typ) = 180 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247VCES TJ = 25C to 150C 600 VE153432VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 70 A CE Isolated Backsi

 4.2. Size:499K  ixys
 ixgr40n60b2d1.pdf

IXGR40N60BD1 IXGR40N60BD1

VCES = 600 VIXGR 40N60B2HiPerFASTTM IGBTIXGR 40N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 1.9 VC2-Class High Speed IGBTstfi typ = 82 ns(Electrically Isolated Back Surface)Optimized for 10-25 KHz hard switchingand up to 150 KHz resonant switchingPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432VCES TJ = 25C to 150C 600 VV

 4.3. Size:499K  ixys
 ixgr40n60b2.pdf

IXGR40N60BD1 IXGR40N60BD1

VCES = 600 VIXGR 40N60B2HiPerFASTTM IGBTIXGR 40N60B2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 1.9 VC2-Class High Speed IGBTstfi typ = 82 ns(Electrically Isolated Back Surface)Optimized for 10-25 KHz hard switchingand up to 150 KHz resonant switchingPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432VCES TJ = 25C to 150C 600 VV

Datasheet: IXGP15N120B , IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , IXGR32N60CD1 , FGH40N60SFD , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 .

 

 
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