BLQG50T65FDLA-W Datasheet. Specs and Replacement

Type Designator: BLQG50T65FDLA-W  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 44 nS

Coesⓘ - Output Capacitance, typ: 158 pF

Package: TO-3PN

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BLQG50T65FDLA-W datasheet

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BLQG50T65FDLA-W

BLQG50T65FDLA IGBT 1 Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V... See More ⇒

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BLQG50T65FDLA-W

BLQG50T65FCKA IGBT 1 Description Step-Down Converter BLQG50T65FCKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V... See More ⇒

Specs: BLG75T65FUK-F, BLQG3040A-D, BLQG3040A-B, BLQG3040-D, BLQG3040-B, BLQG50T65FCKA-F, BLQG50T65FDLA-F, BLQG50T65FDLA-K, SGH80N60UFD, RGT20TM65D, AMPBQ200N75GSFA, AMPBW50N65E, AMPBZ50N65ED, MPBC40N65EH, MPBD6N65ESF, MPBC6N65ESF, MPBL75N120BF

Keywords - BLQG50T65FDLA-W transistor spec

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