BLQG50T65FDLA-W Datasheet and Replacement
Type Designator: BLQG50T65FDLA-W
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 158 pF
Package: TO-3PN
BLQG50T65FDLA-W substitution
BLQG50T65FDLA-W Datasheet (PDF)
blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w.pdf

BLQG50T65FDLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V
blqg50t65fcka-f.pdf

BLQG50T65FCKA IGBT 1Description Step-Down Converter BLQG50T65FCKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V
Datasheet: BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , IKW50N60H3 , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF .
History: IKP15N65F5 | IXGQ50N60B4D1 | BRGH25N120D | APTGS25X120BTP2 | MIXA150R1200VA | AP28G40GEM-HF | IXGP24N60C4
Keywords - BLQG50T65FDLA-W transistor datasheet
BLQG50T65FDLA-W cross reference
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BLQG50T65FDLA-W substitution
BLQG50T65FDLA-W replacement
History: IKP15N65F5 | IXGQ50N60B4D1 | BRGH25N120D | APTGS25X120BTP2 | MIXA150R1200VA | AP28G40GEM-HF | IXGP24N60C4



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