All IGBT. BLQG50T65FDLA-W Datasheet

 

BLQG50T65FDLA-W IGBT. Datasheet pdf. Equivalent


   Type Designator: BLQG50T65FDLA-W
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 158 pF
   Qgⓘ - Total Gate Charge, typ: 106 nC
   Package: TO-3PN

 BLQG50T65FDLA-W Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLQG50T65FDLA-W Datasheet (PDF)

 0.1. Size:960K  belling
 blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w.pdf

BLQG50T65FDLA-W BLQG50T65FDLA-W

BLQG50T65FDLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

 4.1. Size:938K  belling
 blqg50t65fcka-f.pdf

BLQG50T65FDLA-W BLQG50T65FDLA-W

BLQG50T65FCKA IGBT 1Description Step-Down Converter BLQG50T65FCKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

Datasheet: BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , GT45F122 , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF .

 

 
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