MPBA10N65EF Datasheet and Replacement
Type Designator: MPBA10N65EF
Type: IGBT + Anti-Parallel Diode
Marking Code: MP10N65EF
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 32 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Qgⓘ - Total Gate Charge, typ: 58 nC
Package: TO220F
MPBA10N65EF Datasheet (PDF)
mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf

MPBX10N65EF650V-10A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCE TO-220Type Marking Package CodeMPBP10N65EF MP10N65EF TO-220-3MPBA10N65EF MP10N65EF
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf

MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N
Datasheet: AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , CRG75T60AK3HD , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF .
History: NCE40TD120WW | CM100TX-24S | IXGH30N120C3H1
Keywords - MPBA10N65EF transistor datasheet
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History: NCE40TD120WW | CM100TX-24S | IXGH30N120C3H1



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