All IGBT. MPBA10N65EF Datasheet

 

MPBA10N65EF Datasheet and Replacement


   Type Designator: MPBA10N65EF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Package: TO220F
 

 MPBA10N65EF substitution

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MPBA10N65EF Datasheet (PDF)

 ..1. Size:843K  cn marching-power
 mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf pdf_icon

MPBA10N65EF

MPBX10N65EF650V-10A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCE TO-220Type Marking Package CodeMPBP10N65EF MP10N65EF TO-220-3MPBA10N65EF MP10N65EF

 9.1. Size:1071K  cn marching-power
 mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf pdf_icon

MPBA10N65EF

MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N

Datasheet: AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , GT30G122 , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF .

History: GT15Q102

Keywords - MPBA10N65EF transistor datasheet

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