MPBA10N65EF Specs and Replacement
Type Designator: MPBA10N65EF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 32 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
tr ⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Package: TO220F
MPBA10N65EF Substitution - IGBT ⓘ Cross-Reference Search
MPBA10N65EF datasheet
mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf
MPBX10N65EF 650V-10A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution G C E TO-220 Type Marking Package Code MPBP10N65EF MP10N65EF TO-220-3 MPBA10N65EF MP10N65EF... See More ⇒
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf
MPBX15N65EF 650V-15A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution G C TO-220 E Type Marking Package Code C MPBP15N65EF MP15N65EF TO-220-3 MPBA15N65EF MP15N... See More ⇒
Specs: AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , IKW40T120 , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF .
Keywords - MPBA10N65EF transistor spec
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