MPBW25N120BF IGBT. Datasheet pdf. Equivalent
Type Designator: MPBW25N120BF
Type: IGBT + Anti-Parallel Diode
Marking Code: MP25N120BF
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 348 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.92 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 52 nS
Coesⓘ - Output Capacitance, typ: 116 pF
Qgⓘ - Total Gate Charge, typ: 171 nC
Package: TO247
MPBW25N120BF Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPBW25N120BF Datasheet (PDF)
mpbw25n120bf.pdf
MPBW25N120BF1200V-25A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Frequency converterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW25N120BF MP25N120BF TO-247-3Maximum Rated Values
mpbw25n120b.pdf
MPBW25N120B 1200V 25AIGBT TO-247 MPBW25N120BMP25N120BTO2471 V
mpbp20n65ef mpba20n65ef mpbc20n65ef mpbw20n65ef mpbt20n65ef.pdf
MPBX20N65EF650V-20A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBP20N65EF MP20N65EF TO-220MPBA20N65EF MP20N65EF TO-220FMPBC20N6
Datasheet: MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF , MPBQ50N120B , MPBQ75N120BF , MPBQ75N120E , MPBW15N120BF , RJP6065DPM , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E .
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