IXGT15N120CD1 PDF and Equivalents Search

 

IXGT15N120CD1 Specs and Replacement

Type Designator: IXGT15N120CD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 155 pF

Package: TO268

 IXGT15N120CD1 Substitution

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IXGT15N120CD1 datasheet

 ..1. Size:60K  ixys
ixgt15n120cd1.pdf pdf_icon

IXGT15N120CD1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2... See More ⇒

 3.1. Size:52K  ixys
ixgt15n120c.pdf pdf_icon

IXGT15N120CD1

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V E VGEM Transient 30 V (TAB) IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-247 AD (IXGH) ICM TC =... See More ⇒

 4.1. Size:60K  ixys
ixgt15n120bd1.pdf pdf_icon

IXGT15N120CD1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2... See More ⇒

 4.2. Size:66K  ixys
ixgt15n120b2d1.pdf pdf_icon

IXGT15N120CD1

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C ... See More ⇒

Specs: IXGP8N100 , IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGH60N60 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , IXGT28N30B .

Keywords - IXGT15N120CD1 transistor spec

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