All IGBT. AOD5B65N1 Datasheet

 

AOD5B65N1 Datasheet and Replacement


   Type Designator: AOD5B65N1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 52 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 20 pF
   Package: TO252
 

 AOD5B65N1 substitution

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AOD5B65N1 Datasheet (PDF)

 ..1. Size:1185K  aosemi
 aod5b65n1.pdf pdf_icon

AOD5B65N1

AOD5B65N1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 5A Very low turn-off switching loss with softnessVCE(sat) (TJ=25C) 2V Fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability

 7.1. Size:773K  aosemi
 aod5b65mq1e.pdf pdf_icon

AOD5B65N1

AOD5B65MQ1ETM 650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 5AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 2.15VC) diode Very good EMI performance with lower turn-on switching losses

 7.2. Size:1255K  aosemi
 aod5b65m1e.pdf pdf_icon

AOD5B65N1

AOD5B65M1ETM650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllabilityIC (TC=100C) 5A Low VCE(sat) for low conduction lossesVCE(sat) (TJ=25C) 2.15V Soft switching performance and low EMI High electrostatic perfor

 7.3. Size:765K  aosemi
 aod5b65m1.pdf pdf_icon

AOD5B65N1

AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

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Datasheet: AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , IRG7IC28U , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 .

History: APT15GP60KG | IXEH40N120D1

Keywords - AOD5B65N1 transistor datasheet

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