AOK30B120D2 Specs and Replacement
Type Designator: AOK30B120D2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 340 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
Coesⓘ - Output Capacitance, typ: 109 pF
Package: TO247
AOK30B120D2 Substitution - IGBTⓘ Cross-Reference Search
AOK30B120D2 datasheet
aok30b120d2.pdf
AOK30B120D2 TM 1200V, 30A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI IC (TC=100 30A C) Better thermal management VCE(sat) (TC=25 1.77V C) High surge current capability Minimal gate spi... See More ⇒
aok30b135w1.pdf
AOK30B135W1 TM 1350V, 30A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.8V Better thermal management Hi... See More ⇒
aok30b60d1.pdf
AOK30B60D1 TM 600V, 30A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 30A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒
Specs: AOGF60B65H2AL, AOK20B120D1, AOK20B120E1, AOK20B120E2, AOK20B135D1, AOK20B135E1, AOK20B65M1, AOK20B65M2, GT30G124, AOK30B135C1, AOK30B135W1, AOK30B65M2, AOK40B120H1, AOK40B120M1, AOK40B120N1, AOK40B120P1, AOK40B60D1
Keywords - AOK30B120D2 transistor spec
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