All IGBT. AOK30B135C1 Datasheet

 

AOK30B135C1 IGBT. Datasheet pdf. Equivalent


   Type Designator: AOK30B135C1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 288 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.92 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 75 pF
   Qgⓘ - Total Gate Charge, typ: 65 nC
   Package: TO247

 AOK30B135C1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOK30B135C1 Datasheet (PDF)

 ..1. Size:520K  aosemi
 aok30b135c1.pdf

AOK30B135C1 AOK30B135C1

AOK30B135C1TM 1350V, 30A Alpha RC-IGBTwith Monolithic Body Diode General Description Product Summary Latest AlphaRC-IGBT (RC-IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 30AC) Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 1.92VC)

 5.1. Size:1160K  aosemi
 aok30b135w1.pdf

AOK30B135C1 AOK30B135C1

AOK30B135W1TM1350V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hi

 7.1. Size:1028K  aosemi
 aok30b120d2.pdf

AOK30B135C1 AOK30B135C1

AOK30B120D2 TM1200V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI IC (TC=100 30AC) Better thermal management VCE(sat) (TC=25 1.77VC) High surge current capability Minimal gate spi

 8.1. Size:699K  aosemi
 aok30b60d1.pdf

AOK30B135C1 AOK30B135C1

AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 8.2. Size:1259K  aosemi
 aok30b65m2.pdf

AOK30B135C1 AOK30B135C1

AOK30B65M2TM650V, 30A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 30A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 8.3. Size:695K  aosemi
 aok30b60d.pdf

AOK30B135C1 AOK30B135C1

AOK30B60DTM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

Datasheet: AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , IHW20N135R5 , AOK30B135W1 , AOK30B65M2 , AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 .

 

 
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