All IGBT. AOK30B135W1 Datasheet

 

AOK30B135W1 Datasheet and Replacement


   Type Designator: AOK30B135W1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 340 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 107 pF
   Package: TO247
 

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AOK30B135W1 Datasheet (PDF)

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 aok30b135w1.pdf pdf_icon

AOK30B135W1

AOK30B135W1TM1350V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hi

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 aok30b135c1.pdf pdf_icon

AOK30B135W1

AOK30B135C1TM 1350V, 30A Alpha RC-IGBTwith Monolithic Body Diode General Description Product Summary Latest AlphaRC-IGBT (RC-IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 30AC) Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 1.92VC)

 7.1. Size:1028K  aosemi
 aok30b120d2.pdf pdf_icon

AOK30B135W1

AOK30B120D2 TM1200V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI IC (TC=100 30AC) Better thermal management VCE(sat) (TC=25 1.77VC) High surge current capability Minimal gate spi

 8.1. Size:699K  aosemi
 aok30b60d1.pdf pdf_icon

AOK30B135W1

AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

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Datasheet: AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , GT45F122 , AOK30B65M2 , AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 .

History: APT15GP60KG | IXEH40N120D1

Keywords - AOK30B135W1 transistor datasheet

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