AOK40B120H1 PDF and Equivalents Search

 

AOK40B120H1 Specs and Replacement

Type Designator: AOK40B120H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 230 pF

Package: TO247

 AOK40B120H1 Substitution

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AOK40B120H1 datasheet

 ..1. Size:842K  aosemi
aok40b120h1.pdf pdf_icon

AOK40B120H1

AOK40B120H1 TM 1200V, 40A AlphaIGBT With Soft and Fast Recovery Anti-parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low... See More ⇒

 5.1. Size:609K  aosemi
aok40b120p1.pdf pdf_icon

AOK40B120H1

AOK40B120P1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) IC (TC=100 C) 40A High short-circuit ruggedness VCE(sat) (TJ=25 C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a... See More ⇒

 5.2. Size:636K  aosemi
aok40b120n1.pdf pdf_icon

AOK40B120H1

AOK40B120N1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) and VF IC (TC=100 40A C) High short-circuit ruggedness VCE(sat) (TJ=25 1.97V C) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e... See More ⇒

 5.3. Size:995K  aosemi
aok40b120m1.pdf pdf_icon

AOK40B120H1

AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o... See More ⇒

Specs: AOK20B135D1, AOK20B135E1, AOK20B65M1, AOK20B65M2, AOK30B120D2, AOK30B135C1, AOK30B135W1, AOK30B65M2, RJH30E2DPP, AOK40B120M1, AOK40B120N1, AOK40B120P1, AOK40B60D1, AOK40B65H1, AOK40B65HQ1, AOK40B65HQ2, AOK40B65HQ3

Keywords - AOK40B120H1 transistor spec

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