AOKS40B60D1 Datasheet and Replacement
Type Designator: AOKS40B60D1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO247
- IGBT Cross-Reference
AOKS40B60D1 Datasheet (PDF)
aoks40b60d1.pdf

AOKS40B60D1TM600V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 600V High efficient turn-on di/dt controllability IC (TC=100C) 40A Very high switching speed VCE(sat) (TC=25C) 1.85V Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggednessApplications Power factor c
aoks40b65h2al.pdf

AOKS40B65H2ALTM650V, 40A AlphaIGBTGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown VoltageIC (TC=100C) 40A High Efficient Turn-On di/dt ControllabilityVCE(sat) (TJ=25C) 2.05V Very High Switching Speed Low Turn-Off Switching Loss and Softness Very Good EMI BehaviorApplications PFC Circuits Ve
aoks40b65h1.pdf

AOKS40B65H1/AOTS40B65H1TM650V, 40A Alpha IGBTGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A High efficient turn-on di/dt controllability VCE(sat) (TJ=25C) 1.9V Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit rugged
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - AOKS40B60D1 transistor datasheet
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History: NCE30TD60BP | FD200R12PT4_B6



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