AOTF15B65M2 Datasheet. Specs and Replacement

Type Designator: AOTF15B65M2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 36 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 111 pF

Package: TO220F

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AOTF15B65M2 datasheet

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AOTF15B65M2

AOTF15B65M2 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒

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AOTF15B65M2

AOTF15B65M1 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien... See More ⇒

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AOTF15B65M2

AOTF15B65M3 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci... See More ⇒

 4.3. Size:587K  aosemi
 aotf15b65mq1.pdf pdf_icon

AOTF15B65M2

AOTF15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒

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Specs: AOT5B60D, AOT5B65M1, AOT8B65M3, AOTF10B60D2, AOTF10B65M1, AOTF10B65M2, AOTF10B65MQ2, AOTF15B60D2, MGD623S, AOTF15B65M3, AOTF15B65MQ1, AOTF20B65LN2, AOTF20B65M1, AOTF20B65M2, AOTF5B65M1, AOTF5B65M2, AOTF8B65MQ1

Keywords - AOTF15B65M2 transistor spec

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