All IGBT. AOTF15B65M2 Datasheet

 

AOTF15B65M2 Datasheet and Replacement


   Type Designator: AOTF15B65M2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 36 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 111 pF
   Package: TO220F
      - IGBT Cross-Reference

 

AOTF15B65M2 Datasheet (PDF)

 ..1. Size:1205K  aosemi
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AOTF15B65M2

AOTF15B65M2TM650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 4.1. Size:558K  aosemi
aotf15b65m1.pdf pdf_icon

AOTF15B65M2

AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

 4.2. Size:572K  aosemi
aotf15b65m3.pdf pdf_icon

AOTF15B65M2

AOTF15B65M3TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

 4.3. Size:587K  aosemi
aotf15b65mq1.pdf pdf_icon

AOTF15B65M2

AOTF15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

Datasheet: AOT5B60D , AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 , AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , IXRH40N120 , AOTF15B65M3 , AOTF15B65MQ1 , AOTF20B65LN2 , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - AOTF15B65M2 transistor datasheet

 AOTF15B65M2 cross reference
 AOTF15B65M2 equivalent finder
 AOTF15B65M2 lookup
 AOTF15B65M2 substitution
 AOTF15B65M2 replacement

 

 
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