All IGBT. AOTF15B65M3 Datasheet

 

AOTF15B65M3 Datasheet and Replacement


   Type Designator: AOTF15B65M3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.1 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 68 pF
   Qg ⓘ - Total Gate Charge, typ: 25.4 nC
   Package: TO220F
 

 AOTF15B65M3 substitution

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AOTF15B65M3 Datasheet (PDF)

 ..1. Size:572K  aosemi
 aotf15b65m3.pdf pdf_icon

AOTF15B65M3

AOTF15B65M3TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

 4.1. Size:558K  aosemi
 aotf15b65m1.pdf pdf_icon

AOTF15B65M3

AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

 4.2. Size:587K  aosemi
 aotf15b65mq1.pdf pdf_icon

AOTF15B65M3

AOTF15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 4.3. Size:1205K  aosemi
 aotf15b65m2.pdf pdf_icon

AOTF15B65M3

AOTF15B65M2TM650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

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Datasheet: AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 , AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , AOTF15B65M2 , IXRH40N120 , AOTF15B65MQ1 , AOTF20B65LN2 , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 .

History: TGPF15N60FDR | OST60N65HMF | BSM50GAL100D

Keywords - AOTF15B65M3 transistor datasheet

 AOTF15B65M3 cross reference
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