IXGT28N30B PDF and Equivalents Search

 

IXGT28N30B Specs and Replacement

Type Designator: IXGT28N30B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 56 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO268

 IXGT28N30B Substitution

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IXGT28N30B datasheet

 ..1. Size:93K  ixys
ixgh28n30b ixgt28n30b.pdf pdf_icon

IXGT28N30B

IXGH 28N30B VCES = 300 V HiPerFASTTM IGBT IXGT 28N30B IC25 = 56 A VCE(sat)typ = 2.1 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C56 A TO-268 IC90 TC = 90 C28 A (IXGT) ICM TC = 25 C, 1 ms 112 A G SSOA VGE= 15 V, TV... See More ⇒

 5.1. Size:93K  ixys
ixgh28n30a ixgt28n30a.pdf pdf_icon

IXGT28N30B

IXGH 28N30A VCES = 300 V HiPerFASTTM IGBT IXGT 28N30A IC25 = 56 A VCE(sat)typ = 1.85 V tfi(typ) = 120 ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC25 TC = 25 C56 A IC90 TC = 90 C28 A G E ICM TC = 25 C, 1... See More ⇒

 5.2. Size:93K  ixys
ixgh28n30 ixgt28n30.pdf pdf_icon

IXGT28N30B

IXGH 28N30 VCES = 300 V HiPerFASTTM IGBT IXGT 28N30 IC25 = 56 A VCE(sat)typ = 1.6 V tfi(typ) = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V G E VGES Continuous 20 V (TAB) VGEM Transient 30 V IC25 TC = 25 C56 A TO-247 AD IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 112 A SSOA VGE... See More ⇒

 7.1. Size:588K  ixys
ixgt28n60b.pdf pdf_icon

IXGT28N30B

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,... See More ⇒

Specs: IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , CRG60T60AN3H , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B .

Keywords - IXGT28N30B transistor spec

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