All IGBT. JJT60N65UE Datasheet

 

JJT60N65UE Datasheet and Replacement


   Type Designator: JJT60N65UE
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 394 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO247
 

 JJT60N65UE substitution

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JJT60N65UE Datasheet (PDF)

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JJT60N65UE

650V 60A Trench and Field Stop IGBTJJT60N65UEKey performance: V =650VCETO-247 I =60A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

 5.1. Size:3908K  jiejie micro
 jjt60n65uh.pdf pdf_icon

JJT60N65UE

650V 60A Trench and Field Stop IGBTJJT60N65UHKey performance:TO-3P V =650VCE I =60A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machin

 6.1. Size:3882K  jiejie micro
 jjt60n65he.pdf pdf_icon

JJT60N65UE

650V 60A Trench and Field Stop IGBTJJT60N65HEKey performance: V =650VCETO-247 I =60A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Uninterruptib

Datasheet: JJT75N65HE , JJT20N65SC , JJT20N65SE , JJT20N65SS , JJT20N65SY , JJT25N120SE , JJT25N135UE , JJT60N65HE , IRG7R313U , JJT60N65UH , JJT40N120UE , JJT40N135UE , JJT40N65HE , JJT40N65LE , JJT40N65UE , JJT40N65UH , JJT30N65SE .

Keywords - JJT60N65UE transistor datasheet

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