All IGBT. JJT30N65SE Datasheet

 

JJT30N65SE Datasheet and Replacement


   Type Designator: JJT30N65SE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: T3065SE
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.9 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 39 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Qg ⓘ - Total Gate Charge, typ: 103 nC
   Package: TO247
 

 JJT30N65SE substitution

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JJT30N65SE Datasheet (PDF)

 ..1. Size:3803K  jiejie micro
 jjt30n65se.pdf pdf_icon

JJT30N65SE

650V 30A Trench and Field Stop IGBTJJT30N65SEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GC Positive V temperature coefficient.CE (sat)E High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 5.1. Size:3359K  jiejie micro
 jjt30n65ss.pdf pdf_icon

JJT30N65SE

650V 30A Trench and Field Stop IGBTJJT30N65SSKey performance: V =650VCETO-220F I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

 5.2. Size:3377K  jiejie micro
 jjt30n65sy.pdf pdf_icon

JJT30N65SE

650V 30A Trench and Field Stop IGBTJJT30N65SYKey performance:TO-220 V =650VCE I =30A@T =100C C V =1.7 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

 6.1. Size:2990K  jiejie micro
 jjt30n65ue.pdf pdf_icon

JJT30N65SE

650V 30A Trench and Field Stop IGBTJJT30N65UEKey performance: V =650VCETO-247 I =30A@T =100C C V =1.8VCE(sat)Features: Trench and field-stop technology. Easy parallel switching capability.GCEBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machi

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Keywords - JJT30N65SE transistor datasheet

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