IXGX50N60AU1 PDF and Equivalents Search

 

IXGX50N60AU1 Specs and Replacement

Type Designator: IXGX50N60AU1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃

tr ⓘ - Rise Time, typ: 210 nS

Package: PLUS247

 IXGX50N60AU1 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXGX50N60AU1 datasheet

 ..1. Size:136K  ixys
 ixgx50n60au1.pdf pdf_icon

IXGX50N60AU1

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC... See More ⇒

 0.1. Size:136K  ixys
 ixgx50n60au1s.pdf pdf_icon

IXGX50N60AU1

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC... See More ⇒

 4.1. Size:121K  ixys
 ixgx50n60a2d1.pdf pdf_icon

IXGX50N60AU1

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I... See More ⇒

 4.2. Size:143K  ixys
 ixgk50n60a2u1 ixgx50n60a2u1.pdf pdf_icon

IXGX50N60AU1

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient ... See More ⇒

SHOW MORE

Specs: IXGT28N90B, IXGT31N60, IXGT31N60D1, IXGT32N60BD1, IXGT32N60CD1, IXGT50N60B, IXGT60N60, IXGX120N60B, IRG7IC28U, IXSA12N60AU1, IXSA16N60, IXSH10N120A, IXSH10N120AU1, IXSH15N120AU1, IXSH15N120B, IXSH16N60U1, IXSH20N60AU1

Keywords - IXGX50N60AU1 transistor spec

 IXGX50N60AU1 cross reference
 IXGX50N60AU1 equivalent finder
 IXGX50N60AU1 lookup
 IXGX50N60AU1 substitution
 IXGX50N60AU1 replacement

 

 

 

 

↑ Back to Top
.