All IGBT. IXGX50N60AU1 Datasheet

 

IXGX50N60AU1 Datasheet and Replacement


   Type Designator: IXGX50N60AU1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 210 nS
   Package: PLUS247
      - IGBT Cross-Reference

 

IXGX50N60AU1 Datasheet (PDF)

 ..1. Size:136K  ixys
 ixgx50n60au1.pdf pdf_icon

IXGX50N60AU1

Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC

 0.1. Size:136K  ixys
 ixgx50n60au1s.pdf pdf_icon

IXGX50N60AU1

Preliminary dataHiPerFASTTM IXGX50N60AU1 VCES = 600 VIGBT with Diode IXGX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsTO-247 Hole-less SMD(50N60AU1S)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VTO-247 Hole-less(50N60AU1)VGEM Transient 30 VIC25 TC

 4.1. Size:121K  ixys
 ixgx50n60a2d1.pdf pdf_icon

IXGX50N60AU1

Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I

 4.2. Size:143K  ixys
 ixgk50n60a2u1 ixgx50n60a2u1.pdf pdf_icon

IXGX50N60AU1

Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient

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Datasheet: IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IRGP4063D , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 .

History: HGT1S3N60A4S

Keywords - IXGX50N60AU1 transistor datasheet

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