All IGBT. IXGX50N60AU1 Datasheet

 

IXGX50N60AU1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGX50N60AU1

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 75A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 275

Package: ISO247

IXGX50N60AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGX50N60AU1 Datasheet (PDF)

1.1. ixgk50n60b2d1 ixgx50n60b2d1.pdf Size:627K _ixys

IXGX50N60AU1
IXGX50N60AU1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25C (limited by

1.2. ixgk50n60c2d1 ixgx50n60c2d1.pdf Size:628K _ixys

IXGX50N60AU1
IXGX50N60AU1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25C (limited

1.3. ixgk50n60a2u1 ixgx50n60a2u1.pdf Size:143K _ixys

IXGX50N60AU1
IXGX50N60AU1

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLU

1.4. ixgx50n60a2d1.pdf Size:121K _igbt_a

IXGX50N60AU1
IXGX50N60AU1

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C (limited by leads) 75 A (IXGX) I

1.5. ixgx50n60au1.pdf Size:136K _igbt_a

IXGX50N60AU1
IXGX50N60AU1

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V TO-247 Hole-less (50N60AU1) VGEM Transient ±30 V IC25 TC

1.6. ixgx50n60bd1.pdf Size:88K _igbt_a

IXGX50N60AU1
IXGX50N60AU1

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C75 A PLUS247 IC90 TC = 90°C50 A (IXGX) ICM TC = 25°C, 1 m

1.7. ixgx50n60au1s.pdf Size:136K _igbt_a

IXGX50N60AU1
IXGX50N60AU1

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25°C to 150°C 600 V E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V TO-247 Hole-less (50N60AU1) VGEM Transient ±30 V IC25 TC

1.8. ixgx50n60c2d1.pdf Size:493K _igbt_a

IXGX50N60AU1
IXGX50N60AU1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247 IC25 TC = 25

1.9. ixgx50n60b2d1.pdf Size:494K _igbt_a

IXGX50N60AU1
IXGX50N60AU1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C

Datasheet: IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , P12N60C3 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 .

 


IXGX50N60AU1
  IXGX50N60AU1
  IXGX50N60AU1
 

social 

LIST

Last Update

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |